|
SPA Ferrite Domen
Microwave garnets
Yttrium garnets
Pure Yttrium garnets are the basic ferromagnetic materials for the
whole series of YIG - doped compositions, see example grade.
|
Material grade
|
4pMs
G
+5%
|
DH
(-3dB)
Oe
no more than
|
e'
+5%
|
tgde
.104
no more than
|
geff
+3%
|
Tc
oC
nomin.
|
DHk
Oe
nomin.
|
|
G-178
|
1780
|
45
|
15.1
|
2
|
2.00
|
280
|
1
|
YIG - Al doped
That series of microwave garnets is
presented as the richest product mix by saturation magnetization values.
They are most widely used in low power m-, dm-, and cm-wave devices.
|
Material grade
|
4pMs
G
|
DH
(-3dB)
Oe
no more than
|
e'
+5%
|
tgde
.104
no more than
|
geff
+3%
|
Tc
oC
nomin
|
DHk
Oe
nomin
|
|
GA-150
|
1500±
5%
|
45
|
14.9
|
2
|
2.00
|
250
|
1
|
|
GA-140
|
1400±
5%
|
45
|
14.8
|
2
|
2.00
|
245
|
1
|
|
GA-120
|
1200±
5%
|
45
|
14.6
|
2
|
2.00
|
230
|
1
|
|
GA-110
|
1100±
5%
|
45
|
14.5
|
2
|
2.00
|
220
|
1
|
|
GA-100
|
1000±
5%
|
45
|
14.5
|
2
|
2.00
|
210
|
1
|
|
GA-90
|
900±
5%
|
45
|
14.4
|
2
|
2.00
|
200
|
1
|
|
GA-80
|
800±
5%
|
45
|
14.2
|
2
|
2.00
|
195
|
1
|
|
GA-65
|
650±
5%
|
45
|
14.2
|
2
|
2.00
|
175
|
1
|
|
GA-58
|
580±
5%
|
45
|
14.1
|
2
|
2.01
|
165
|
1
|
|
GA-48
|
480±
25G
|
40
|
14.0
|
2
|
2.01
|
150
|
1
|
|
GA-40
|
400±
25G
|
40
|
13.9
|
2
|
2.01
|
130
|
1.5
|
|
GA-32
|
320±
25G
|
40
|
13.8
|
2
|
2.01
|
120
|
1.5
|
|
GA-20
|
200±
25G
|
40
|
13.7
|
2
|
2.03
|
100
|
2
|
YIG - Ca doped
The garnets of this group feature the narrowest FMR linewidth of all
YIG series. They are especially suitable for application in microwave
devices (including cryogenic ones) having low losses and efficient in
wide frequency and temperature ranges.
|
Material grade
|
4pMs
G
+5%
|
DH
(-3dB)
Oe
no more than
|
e'
+5%
|
tgde
.104
no more than
|
geff
+3%
|
Tc
oC
nomin
|
DHk
Oe
nomin
|
|
*NG-195
|
1950
|
15
|
15.0
|
2
|
2.00
|
235
|
1
|
|
NG-190
|
1900
|
15
|
15.0
|
2
|
2.00
|
215
|
1
|
|
NG-185
|
1850
|
15
|
14.8
|
2
|
2.00
|
214
|
1
|
|
NG-160
|
1600
|
12
|
14.8
|
2
|
2.00
|
220
|
1
|
|
NG-140
|
1400
|
10
|
14.5
|
2
|
2.00
|
215
|
1
|
|
NG-120
|
1200
|
10
|
14.5
|
2
|
2.00
|
180
|
1
|
|
NG-100
|
1000
|
10
|
14.2
|
2
|
2.00
|
170
|
1
|
|
NG-80
|
800
|
10
|
14.1
|
2
|
2.00
|
160
|
1
|
|
NG-52
|
520
|
10
|
13.9
|
2
|
2.00
|
120
|
1
|
YIG – Gd, Al doped
The prime features of these garnets are
high temperature stability of their parameters, good squareness of
hysteresis loop and raised threshold power. They find wide application
in average and high power non-reciprocal as well as controlled microwave
devices (phase shifters, switches, filter etc.).
|
Material grade
|
4pMs
G
+5%
|
DH
(-3dB)
Oe
no more than
|
e'
+5%
|
tgde
.104
no more than
|
geff
+3%
|
Tc
oC
nomin
|
Hc
Oe
nomin
|
Br
G
nomin
|
DHk
Oe
nomin
|
|
GG-178
|
1780
|
42
|
15.0
|
2
|
2.00
|
280
|
0.55
|
1240
|
2
|
|
GG-160
|
1600
|
45
|
14.9
|
2
|
2.00
|
280
|
0.75
|
1120
|
4
|
|
GG-120
|
1200
|
75
|
15.2
|
2
|
2.01
|
280
|
0.60
|
820
|
8
|
|
GG-95
|
940
|
95
|
15.1
|
2
|
2.01
|
255
|
0.70
|
660
|
10
|
|
GG-80
|
800
|
85
|
14.7
|
2
|
2.01
|
240
|
0.55
|
525
|
9
|
|
GG-55
|
550
|
65
|
14.5
|
2
|
2.01
|
180
|
0.55
|
385
|
8
|
|
GG-50
|
490
|
200
|
14.5
|
2
|
2.03
|
205
|
0.65
|
325
|
21
|
YIG - Gd, In doped
The garnets of this group have low losses
with rather high thermal stability of saturation magnetization and good
threshold characteristics. They were developed for use in non-reciprocal
average power devices.
|
Material grade
|
4pMs
G
|
DH
(-3dB)
Oe
no more than
|
e'
+5%
|
tgde
.104
no more than
|
geff
+3%
|
Tc
oC
nomin
|
DHk
Oe
nomin
|
|
GI-138
|
1380±
5%
|
20
|
15.0
|
2
|
2.00
|
240
|
5
|
|
GI-130
|
1300±
5%
|
42
|
15.1
|
2
|
2.00
|
225
|
6
|
|
GI-122
|
1220±
5%
|
20
|
14.9
|
2
|
2.00
|
220
|
3
|
|
GI-120
|
1200±
5%
|
35
|
15.0
|
2
|
2.01
|
220
|
10
|
|
GI-115
|
1150±
5%
|
35
|
15.1
|
2
|
2.00
|
230
|
7
|
|
GI-85
|
850±
5%
|
55
|
15.0
|
2
|
2.01
|
210
|
10
|
|
GI-63
|
630±
5%
|
48
|
14.6
|
2
|
2.01
|
150
|
14
|
|
GI-45
|
450±
25G
|
48
|
14.5
|
2
|
2.02
|
135
|
13
|
|
GI-40
|
400±
25G
|
95
|
14.5
|
2
|
2.03
|
160
|
13
|
YIG - for high peak power devices
The garnets of this group feature
extremely good threshold characteristics.
They are used in devices which must operate at high peak power levels.
|
Material grade
|
4pMs
G
|
DH
(-3dB)
Oe
+20%
|
e'
+5%
|
tgde
.104
no more than
|
geff
+3%
|
Tc
oC
nomin.
|
DHk
Oe
nomin.
|
|
GH-178
|
1780±
5%
|
25
|
15.1
|
2
|
1.99
|
280
|
3.5
|
|
GH-128
|
1280±
5%
|
60
|
15.1
|
2
|
2.00
|
225
|
16
|
|
GH-120
|
1200±
5%
|
100
|
15.0
|
2
|
2.01
|
275
|
15
|
|
GH-65
|
650±
5%
|
45
|
14.7
|
2
|
2.01
|
150
|
16
|
|
GH-47
|
470±
25G
|
45
|
14.5
|
2
|
2.00
|
130
|
19
|
|
G-33
|
330±
25G
|
160
|
14.2
|
2
|
2.02
|
160
|
26
|
|
