| MAGNETRON
SPUTTERING EQUIPMENT |
| The
equipment is assigned for deposition of electro conductive,
semiconductor and dielectric layers on flat electro conductive or
semiconductor or dielectric substrates. Built-in ion beam gun gives
the possibility of prior-deposition substrate cleaning and ion
assistance in process of layer deposition. |
| Each
machine has three-channel gas flow control system and, at
customer's order, may be equipped by a heater providing
controllable substrate temperature (up to 300°C) maintenance and
deposited layer resistance measuring system. HF magnetron
installation gives the possibility of depositing dielectric and
semiconductor layers. The equipment is manufactured in semi- and
fully automated control modifications. |
| |
|
MAIN
TECHNICAL PARAMETERS
|
| Equipment
model |
TIP
71C
|
TIP
9
|
NDM
|
| Total
deposition area per cycle, m² |
0.70
|
1.08
|
0.70
|
| Maximum
substrate dimensions, mm |
100x100
|
150x150
|
100x100
|
| Number
of cleaning ion sources, pcs |
1
|
1
|
1
|
| Number
of magnetrons, pcs |
1÷3
|
1÷3
|
3
|
| Number
of heaters, pcs |
0÷1
|
0÷1
|
1
|
| Maximum
power consumption, kVA |
15
|
20
|
15
|
| Overall
dimensions, m |
2.6x1.5x2.7
|
3.0x2.6x2.5
|
4.0x2.0x2.2
|
| Weight,
kg |
800
|
1500
|
1500
|
|
| |
| TIP
71 Magnetron Sputtering Machine |
|
|
|
| TIP
9C Magnetron Sputtering Machine |
|
|
| |
| NDM
Magnetron Sputtering Machine |
|
|
| |
| Recently
launched: Inductivity Coupled Plasma
Discharge Generator (ICPDG) providing high dry etching uniformity
and selectivity, high deposition speed and excellent plasma
parameters. The ICPDG may be offered either as a separate machine
or for up-grade of obsolete plasma-chemical machines. |
