| MAGNETRON
SPUTTERING MACHINE UNITS |
| |
|
Three-Channel
Gas Flow Control System
|
| The
system includes power&control unit with the socket for PC
connection, three electronic mass flow controllers and three
electromagnetic stop valves. Each of three working gas flows is
maintained independently with the accuracy ± 1% of maximum flow
value. At customer's order the system is equipped by 0.9-90 l/hour
mass flow controllers. Each channel flow iis entered independently
with numerical task indication. |
 |
| |
| Extended
Magnetrons |
| Extended
Magnetrons Magnetrons can be placed either inside or outside (on
flanges) vacuum chamber and provide uniform deposition area width
from 400 and up to 1500 mm. Other width value may be provided at
customer's order. Due to stable work at low pressure magnetrons
provide the possibility of ion treatment during deposition with
the purpose of layer modification, hardening etc. |
| |
|
|
| |
| Target
voltage (negative), V |
350
- 650
|
| Target
current, A |
1
- 40
|
| Operating
pressure, Pa |
0.07
- 0.2
|
| Layer
thickness uniformity, % |
±
5
|
| Maximum
power consumed, kVA |
40
|
| Target
thickness, mm |
10
|
| Target
use ratio, % |
35
- 40
|
| Coolant
conventional pass diameter, mm |
6
- 12
|
| Coolant
pressure, HPa |
3
- 4
|
|
| |
|
Deposition
area width, mm
|
Dimensions,
mm
|
Weight,
kg
|
|
400
|
600
x 137 x 70
|
9.0
|
|
600
|
780
x 137 x 70
|
12.0
|
|
800
|
1000
x 137 x 70
|
18.0
|
|
1300
|
1640
x 137 x 70
|
31.0
|
|
|
|
| Extended
Ion Beam Gun |
| Ion
beam guns are assigned for ion cleaning of substrates (including
metallic and glass ones) prior to depositing any layer as well as
for ion and ion-chemical etching of metals, semiconductors and
dielectrics. Ion beam guns can be placed either inside or outside
(on flanges) vacuum chamber and provide uniform ion-treatement
area width 160, 350, 450, 650 and 900 mm. Other width value (up to
more than 2000 mm) may be provided at customer's order. As ion
beam gun current depends by design only on gas flow devices can
operate in a pressure range from 0.01 and up to 0.4 Pa providing
the possibility of ion treatment directly in magnetron deposition
process and of ion assistance during thermal, ion-beam, arc
deposition and reactive magnetron sputtering. |
| |
|
|
| |
|
Discharge
voltage (positive), kV
|
1.5
- 4.0
|
|
Discharge
current, mА
|
300
- 2000
|
|
Gas
consumption, ccms/0.5 А
|
1
|
|
Specific
current per 1 cm of treatment area width, mA/cm
|
no
less than 15
|
|
Maximum
power consumed, kVA
|
4.0
- 6.0
|
|
| |
|
Ion-treatment
area width, mm
|
Dimensions,
mm
|
Weight,
kg
|
|
160
|
230
x74 x 45
|
3.0
|
|
350
|
400
x 74 x 45
|
5.0
|
|
450
|
534
x 74 x 45
|
7.0
|
|
650
|
696
x 74 x 50
|
12.0
|
|
900
|
1016
x 74 x 55
|
18.0
|
|
| |
| Compact
Ion Beam Gun with Cold Cathode |
| This
ion beam gun may be extremely beneficial for laboratory
purposes.It can work hundreds of hours without maintenance.As
discharge characteristics of the device are pracically gas type
independent it can be used with any working gas.Operating
parameters of the device are gas flow dependent and almost gas
pressure independent untill maximum working pressure is reached.
Ion beam gun can be placed either inside or outside (on flanges)
vacuum chamber. |
|
|
| Ion
beam diameter, mm |
20
|
| Maximum
discharge voltage (positive), kV |
4.0
|
| Maximum
discharge current for short time (no more than 10 min.)
switching, mA |
120
(+ 3.5 kV)
|
| Recommended
discharge current for long time switching, mA |
80
|
| Gas
(Argon) consumption at 80 mA discharge current, ccms |
0.15
|
| Recommended
working pressure, Pa |
no
more than 0.5
|
| Diameter,
mm |
60
|
| Length,
mm |
50
|
| Weight,
g |
200
|
|
