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MOCVD AlGaAs and InGaAs Quantum Well High Power Laser Diodes
MOCVD AlGaAs and InGaAsP Superluminescent Diode Modules

MOCVD AlGaAs and InGaAs
Quantum Well High Power Laser Diodes  

Typical Characteristics (T=25°C)

Model

Wavelength,
nm

Output power,
mW

Operating current,
mA

Operating voltage,
V

Threshold current,
mA

Beam divergence,
deg.

Spectral width (FWHM),
nm

Stripe width,
µm

IDL100M-808

805...811

100

300

2.2

180

8 x 30

3

100

IDL250M-808

805...811

250

450

2.0

180

12 x 35

3

80

IDL500M-808

805...811

500

900

2.0

230

12 x 35

3

120

IDL1000M-808

805...811

1000

1400

2.2

350

8 x 30

3

100

IDL200M-830

820...840

200

450

2.2

180

12 x 35

3

30

IDL250M-850

830...870

250

450

2.0

180

12 x 35

3

80

IDL500M-980

960...990

500

800

1.8

150

12 x 32

10

50

IDL1000M-980

960...990

1000

1500

1.9

200

12 x 32

10

100

IDL500M-1020

990...1040

500

900

1.9

200

12 x 32

10

100

IDL1000M-1020

990...1040

1000

1700

2.0

250

12 x 32

10

100

 MOCVD AlGaAs and InGaAsP Superluminescent Diode Modules  
Typical Characteristics (T=25°C)

Model

Wavelength,
nm

SM pigtail output power,
mW

Operating current,
mA

Operating voltage,
V

Spectral width (FWHM),
nm

Residual spectral modulation (ripple),
%

Visibility subpeaks (reflectivity),
dB

SLD-820

810...860

0.5

120

2.4

20

1.0

- 50

SLD-1300

1270...1330

0.4

300

2.0

30

2.0

 

 

 
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Copyright © 2001 Sirdi International
Last modified: October 11, 2001