Model

Active diameter,
µm

Responsivity

Dark
current,
nA

Total
capacitance,
pF

Response time,
ns

Absolute Maximum Ratings

1300 nm

1550 nm

A/W

Chip Mounted On Flat Carrier

PD40/B

40

0.8

0.85

5

0.18

0.06

Reverse bias voltage 10 V

Operating temperature
-60...+55 °C

PD70/B

70

0.8

0.85

5

0.3

0.08

PD250/B

250

0.8

0.85

20

6.0

2.0

PD500/B

500

0.8

0.85

30

35

10.0

TO-18 Case With Glass Window

D250-P/B

250

0.7

0.75

20

6.0

2.0

D500-P/B

500

0.7

0.75

30

35

10

Pigtailed For Single Mode Or Multimode Operation

PD70-PT/B

70

0.8

0.85

5

0.8

0.15

Operating temperature
-20...+55 °C

Model

Active diameter,
mm

Responsivity

Dark current,
nA

Response time (FWHM),
ps

Bandwidth,
-3 dB, 50 W
GHz

Absolute Maximum Ratings

1300 nm

1550 nm

A/W

PDM40

40

0.8

0.85

10

40

10

Reverse bias voltage 20 V

Operating temperature
0...+55 °C

PDM70

70

0.8

0.85

10

75

5

PDM40GW

40

0.7

0.75

10

40

10

PDM70GW

70

0.7

0.85

10

75

5

Model

Active
diameter,
µm

Responsivity

Dark current,
nA

Frequency response flatness,
dB

Bandwidth,
-3 dB, 50 W
GHz

Return optical loss,
dB

Absolute Maximum Ratings

1300 nm

1550 nm

A/W

PDWM40

40

0.3*

0.35*

20

±1.5

0.1...12

-45

Reverse bias voltage 20 V
Operating temperature
0...+55 °C

PDMN40**

40

0.7

0.75

20

±1.5***

7.5...9.5

-45

Bit Rate,
MHz

Sensitivity,
BER=10^-9,
dBm

Dynamic Range,
dB

Responsivity,
A/W

Supply Voltage,
V

PD Bias,
V

Operating Temperature,
°C

18

50

24

0.65

±5

-3.5

-40...+50

30

43

24

0.65

±5

-3.5

-40...+50

90

37

24

0.65

±5

-3.5

-40...+50

18

50

24

0.65

±5

-3.5

-40...+50

Features:

The photodiodes are designed for use in spectrometry and photometry to measure low-intensity light parameters. Structurally the module is made in rectangular package with 8 electrical pins for mounting in a card and with the glass window. The module consists of the Ge photodiode, the microcooler and thermal resistor to set a mode of temperature stabilization.

Model

Operating wavelength,
nm

Sensitivity,
A/W

Photosensitive area diameter,
mm

Dark current,
µA(*)

Photodiode capacitance,
pF

FDG-500ST

400 - 1500

0.9 ... 1.0

500

< 0.05

< 20

FDG-1000ST

1000

< 0.2

< 80

FDG-3600ST

3600

< 2.5

< 1000

FDG-5000ST

5000

< 5

< 2000

Time of going into mode, s

1.5

Operating voltage, V

5

Temperature gradient, °C

50

TE cooler current, µA

300

Thermoresistor resistance, kOhm

3 ... 30

Operating temperature range, °C

- 40 ... +50

Time between failures, h

50,000

The LFDG-70 and LFDG-150 Ge avalanche photodiodes are designed for use in photoreceivers for various purposes as highly sensitive fast-response light sensors within 0.5 ... 1.6 µm. In main characteristics Ge avalanche photodiodes are superior to pin photodiodes based on III-V semiconductor compounds.

Applications:

LFDG-70B, LFDG-150B

Packageless avalanche photodiodes on glass-ceramic substrate

LFDG-70BP, LFDG-150BP

Pairs of packageless avalanche photodiodes on separate glass-ceramic substrate matched according to thermal avalanche voltage drift

LFDG-70A, LFDG-150A

TO-18 packaged avalanche photodiodes

LFDG-70AP, LFDG-150AP

Pairs of TO-18 packaged avalanche photodiodes matched according to thermal avalanche voltage drift

LFDG-70VP, LFDG-150VP

TO-5 packaged avalanche photodiodes with built-in stabilitron

LFDG-150AS

TO-18 packaged avalanche photodiode with stabilitron on a single chip

Parameters

LFDG-70

LFDG-150

Note:

Sensitive area diameter, µm

70

150

Sensitivity, A/W

18...25

9...12

@1.06 µm and a noise current spectral density of 5 x 10-12 A/Hz^1/2

Sensitivity, A/W

25 ... 35

13 ... 17

@1.3...1.55 µm and a noise current spectral density of 5 x 10-12 A/Hz^1/2

Multiplied dark current, nA

10...15

25...35

Extrapolated to M=1

Capacity, pF

0.35...0.70

0.8...2.0

Depends on a design

Operating voltage, V

30...42

Stabilitron current, mA

1.0...1.5

2.0...3.0

Only for photodiodes with the index "P"

Operating spectral range, µm

0.5...1.6

Operating temperature range, °C

-60...+60

Time between failures, h

No less 50,000

Features:

The module is designed for use in long-haul fiberoptic data transmission systems with high data rates and in optical reflectometers. Structurally the module is made in rectangular package with 8 electrical pins for mounting in a card and with fiberoptic cable input. The module consists of the Ge avalanche photodiode, the microcooler and thermoresistor to set a mode of temperature stabilization.

Wavelength, µm

0.6 ...1.6

Operating frequency, MHz

0 ... 1000

Sensitivity @1.3 µm and a noise current spectral density of 5 x 10-12 A/Hz^1/2, A/W

36 ... 46

Sensitivity @1.55 µm and a noise current spectral density of 5 x 10-12 A/Hz^1/2, A/W

32 ... 40

Operating voltage, V

30 ... 45

Thermoresistor resistance, kOhm

3 ... 30

Operating temperature range, °C

-40 ... +55

TE cooler current, mA

300

Time between failures, h

No less 50,000

Photodiode capacitance at operating voltage, pF

0.6 ... 1.0

Time of going into mode, s

1.5

The FPM-series analog photoreceiving modules are designed for use in analog and digital fiberoptic data transmission systems with rates to 622 Mbps as pulse optical/electrical converters. The modules have an optical input with multimode (50/125 µm) or single-mode (9/125 µm) fiberoptic cable with the optical connector of LIST-X, FC, ST or without it. The highly sensitive InGaAsP and Ge pin-photodiodes (FPM-XXXM) as well as the germanium avalanche photodiodes with the circuit for thermostabilization of avalanche multiplication factor (FPM-XXX2M) are used in photoreceiving modules.

Features:

Parameters

Model

FPM-34M/LM

FPM-155M/LM

FPM-622M/LM

Data receiving rate, Mbps

0…34

0…155

0…622

Sensitivity, dBm (*)

- 42 / - 55

- 40 / - 53

-36 / -50

Dynamic range, dB

30 / 40 (**)

30 / 40 (**)

20 / 30 (**)

Operating spectral range, µm

0.7 … 1.55

Operating temperature range, °C

- 40 … +55

Time between failures, h

No less 30,000