|
CW Laser Diodes
CW
Laser Diodes
Typical Characteristics (T=25°C)
|
Model
|
Wavelength,
nm
|
Output
power,
mW
|
Operating
current,
mA
|
Operating
voltage,
V
|
Threshold
current,
mA
|
Beam
divergence,
deg.
|
Spectral
width (FWHM),
nm
|
Stripe
width,
µm
|
|
Visible
Laser Diodes MOCVD AlGaInP Quantum Well Types
|
|
IDL5S-640
|
635...640
|
5
|
50
|
2.3
|
40
|
10
x 35
|
2.0
|
5
|
|
IDL10S-650
|
645...660
|
10
|
60
|
2.4
|
35
|
10
x 30
|
2.0
|
5
|
|
IDL15S-670
|
660...680
|
15
|
55
|
2.3
|
35
|
10
x 30
|
2.0
|
5
|
|
IDL20M-635
|
630...640
|
20
|
160
|
2.5
|
160
|
8
x 30
|
3.0
|
12
|
|
IIDL30M-670
|
660...680
|
30
|
160
|
2.4
|
90
|
8
x 30
|
3.0
|
12
|
|
IDL50M-670
|
660...680
|
50
|
200
|
2.5
|
100
|
10
x 35
|
4.0
|
15
|
|
IDL100M-670
|
670...690
|
100
|
260
|
2.5
|
100
|
10
x 35
|
5.0
|
30
|
|
IIDL250M-680
|
680...690
|
250
|
500
|
2.5
|
40
|
10
x 35
|
5.0
|
50
|
|
Single
Mode Infrared Laser Diodes MOCVD GaAlAs Quantum Well Types
|
|
IDL5S-760
|
755...765
|
5
|
75
|
2.2
|
55
|
10
x 35
|
1.5
|
3
|
|
IDL10S-770
|
770...780
|
10
|
80
|
2.2
|
45
|
8
x 30
|
1.5
|
3
|
|
IDL100S-780
|
770...790
|
100
|
180
|
2.2
|
55
|
8
x 30
|
1.5
|
3
|
|
IDL50S-810
|
800...820
|
50
|
130
|
2.2
|
3
|
10
x 40
|
1.5
|
30
|
|
IDL100S- 810
|
800...820
|
100
|
160
|
2.2
|
3
|
10
x 35
|
1.5
|
30
|
|
IDL50S-830
|
820...840
|
50
|
120
|
2.2
|
25
|
10
x 30
|
1.5
|
3
|
|
IDL100S-830
|
820...840
|
100
|
160
|
2.2
|
35
|
10
x 35
|
1.5
|
3
|
|
IDL50S-850
|
840...870
|
50
|
150
|
2.2
|
40
|
10
x 35
|
1.5
|
3
|
|
IDL100S-850
|
840...880
|
100
|
160
|
2.2
|
35
|
10
x 35
|
1.5
|
3
|
|
IDL50S-875
|
860...880
|
50
|
130
|
2.1
|
30
|
10
x 30
|
1.5
|
3
|
|
IDL50S-900
|
870...910
|
50
|
180
|
2.2
|
40
|
10
x 30
|
1.5
|
3
|
|
IDL50S-915
|
910...920
|
50
|
80
|
2.2
|
30
|
10
x 30
|
1.5
|
3
|
|
IDL100S-920
|
915...925
|
100
|
170
|
2.2
|
35
|
10
x 30
|
1.5
|
3
|
|
MOCVD
InGaAs Quantum Well Types
|
|
IDL50S-980
|
960...990
|
50
|
130
|
2.3
|
35
|
10
x 30
|
3.0
|
3
|
|
IDL100S-980
|
960...990
|
100
|
210
|
2.4
|
40
|
10
x 30
|
3.0
|
3
|
|
MOCVD
InGaAsP Types
|
|
IDL5S-1300
|
1270...1330
|
5
|
50
|
1.5
|
30
|
20
x 35
|
3.0
|
2.5
|
|
IDL10S-1300
|
1270...1330
|
10
|
75
|
1.8
|
30
|
20
x 35
|
3.0
|
2.5
|
|
IDL15S-1300
|
1270...1330
|
15
|
100
|
2.0
|
30
|
20
x 35
|
3.0
|
2.5
|
|
IDL20S-1300
|
1270...1330
|
20
|
95
|
1.6
|
20
|
20
x 35
|
3.0
|
3.5
|
|
IDL30S-1300
|
1270...1330
|
30
|
120
|
1.75
|
20
|
20
x 35
|
3.0
|
3.5
|
|
IDL40S-1300
|
1270...1330
|
40
|
180
|
2.1
|
25
|
20
x 35
|
3.0
|
4.0
|
|
IDL50S-1300
|
1270...1330
|
50
|
200
|
2.3
|
25
|
20
x 35
|
3.0
|
4.0
|
|
IDL100M-1300
|
1270...1330
|
100
|
350
|
3.5
|
50
|
20
x 35
|
3-5
|
6.0
|
|
IDL30S-1550
|
|
30
|
150
|
2.0
|
25
|
20
x 35
|
3.0
|
4.0
|
|
IDL100M-1550
|
|
100
|
400
|
2.4
|
50
|
20
x 35
|
3-5
|
6.0
|
LD-1060, LD-1460, LD-1650 Laser Diodes
LD-1060, LD-1460, LD-1650 Series of
devices are quantum well structure fabricated MOCVD technique in
(1060…1650) nm spectral range. Low threshold current and high slope
efficiency contribute to low operating currents, enhancing reliability.
LD light source is a CW injection semiconductor laser with built-in
monitor photodiode to stabilize output power. The laser light source is
required the application in various optoelectronic systems and
high-resolution spectroscopy.
Specifications (T
= 25 °C)
|
Characteristics
|
LD-1060
|
LD-1460
|
LD-1650
|
|
Optical output
power, mW
|
10
|
5
|
5
|
|
Wavelength, nm
|
1060
|
1460
|
1650
|
|
Emitting area,
µm x µm
|
|
3x1.5
|
|
|
Threshold
current, mA
|
10
|
40
|
40
|
|
Forward
current, mA
|
50
|
60
|
70
|
|
Forward
voltage, V
|
2.0
|
2.0
|
2.0
|
|
Beam
Divergence perpendicular, Degree
|
40
|
40
|
40
|
|
Beam
Divergence parallel, Degree
|
10
|
10
|
10
|
|
Static
alignment, Degree
|
<±3
|
<±3
|
<±3
|
|
Positional
accuracy, Degree
|
±100
|
±100
|
±100
|
|
Spectral width
(FWHM), nm
|
2.0
|
2.0
|
2.0
|
|
Mode structure
|
Single
Mode
|
|
Differential
Efficiency, mW/mA
|
0.2
|
0.2
|
0.2
|
|
Monitoring
Output Current, mA
|
<0.04
|
<0.04
|
<0.04
|
Additional
- external quantum efficiency : not less than 20 %;
- wavelength drift under temperature change : not more than 4 A/°C;
- threshold current drift under temperature change : not more that 1.0
%/°C;
- thermal resistance : not more than 10 °C/W;
- operating temperature range : -60 °C...+60 °C;
- monitor PD operating voltage : (5±0.5) V
- astigmatism : not more 25 µm
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