The division
for semiconductor lasers was founded at POLYUS Research &
Development Institute not longer before achieving the effect of
stimulated emission generation by the p - n junction in Ga As. The
main efforts are focused in following applications:
laser
pointers
fiberoptic
communications
pumping
of solid-state lasers
laser
medical therapeutic systems
scientific
research.
Today POLYUS Research &
Development Institute produced over 40 models of laser diodes
emitting in range of 635 to 1550 nm.
